PSMN004-60B Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
0.015
R _DSon
(W)
0.01
0.005
5V
5.5 V
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T_j = 25 °C
6V
6.5 V
V_GS = 20 V _{10 V}
0
0
100
8V 7V
200
300
I_D (A)
2.4
a
1.8
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1.2
0.6
0
−60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
12
V_GS
(V)
10
8
6
I_D = 75 A
V_DD = 48 V
T_j = 25 °C
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10⁵
C
(pF)
10⁴
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C_iss
4
2
00
50
100
150 _{QG (nC)} 200
10³
10²
10^−1
1
C_oss
C_rss
10 _{VDS (V)} 10²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN004-60B_2
Product data sheet
Rev. 02 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
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