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| PSMN004-60B Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage
Tj ⥠25 °C; Tj ⤠175 °C
-
VDGR
drain-gate voltage
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
-
VGS
gate-source voltage
-20
ID
drain current
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
-
IDM
peak drain current
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
Tstg
storage temperature
-55
Tj
junction temperature
-55
VGSM
peak gate-source voltage
pulsed; tp ⤠50 µs; δ = 25 %; Tj ⤠150 °C
-30
Source-drain diode
IS
source current
Tmb = 25 °C
-
ISM
peak source current
tp ⤠10 µs; pulsed; Tmb = 25 °C
-
Avalanche ruggedness
EDS(AL)S
IDS(AL)S
non-repetitive drain-source
avalanche energy
non-repetitive drain-source
avalanche current
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A;
-
Vsup = 15 V; unclamped; tp = 0.1 ms; RGS = 50 â¦
VGS = 10 V; Vsup = 15 V; RGS = 50 â¦;
-
Tj(init) = 25 °C; unclamped
Max Unit
60
V
60
V
20
V
75
A
75
A
400 A
230 W
175 °C
175 °C
30
V
75
A
400 A
500 mJ
75
A
120
Ider
(%)
100
03ah79
80
60
40
20
0
0
30
60
90 120 150 180
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN004-60B_2
Product data sheet
Rev. 02 â 15 December 2009
© NXP B.V. 2009. All rights reserved.
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