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| PSMN004-60B Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
54
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
60
VGS(th)
gate-source threshold ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 8 -
voltage
ID = 1 mA; VDS= VGS; Tj = 175 °C; see Figure 8 1
ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 8
2
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 175 °C
-
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
resistance
see Figure 9 and 10
-
-
V
-
-
V
-
4.4 V
-
-
V
3
4
V
-
500 µA
0.02 1
µA
10
100 nA
10
100 nA
6.5 7.55 mâ¦
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9 and 10
-
3.1 3.6 mâ¦
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C;
-
168 -
nC
QGS
gate-source charge
see Figure 11
-
36
-
nC
QGD
gate-drain charge
-
54
-
nC
Ciss
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
8300 -
pF
Coss
output capacitance
see Figure 12
-
1050 -
pF
Crss
reverse transfer
capacitance
-
550 -
pF
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 15 V; RL = 1.25 â¦; VGS = 10 V;
RG(ext) = 6 â¦; Tj = 25 °C
-
38
-
ns
-
74
-
ns
-
133 -
ns
-
75
-
ns
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
0.8 1.2 V
PSMN004-60B_2
Product data sheet
Rev. 02 â 15 December 2009
© NXP B.V. 2009. All rights reserved.
6 of 13
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