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| PSMN004-60B Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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NXP Semiconductors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
103
ID
(A)
Limit RDSon = VDS/ID
102
03ah81
tp = 10 µs
100 µs
1 ms
DC
10
10 ms
100 ms
1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN004-60B_2
Product data sheet
Rev. 02 â 15 December 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
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