PSMN004-60B Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
300
I_D
T_j = 25 °C ^{7.5 V}
8V
(A)
10 V
200
20V
03ah82
7V
6.5 V
6V
100
00
5.5 V
5V
V_GS = 4.5 V
0.4
0.8
1.2
1.6VDS(V) 2
100
I_D
(A)
80
V_DS > I_D x R_DSon
03ah84
60
T_j = 175 °C
40
20
25 °C
00
1
2
3
4
5
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
03aa32
10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN004-60B_2
Product data sheet
Rev. 02 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
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