PQMD12 Datasheet, PDF (8/13 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

NXP Semiconductors
9
C_c
(pF)
6
3
PQMD12
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
006aac762
10³
006aac763
f_T
(MHz)
10²
0
0
-10
-20
-30
f = 1 MHz; T_amb = 25 °C
-40
-50
V_CB (V)
Fig. 14. PNP transistor: Collector capacitance as a
function of collector-base voltage; typical
values of built-in transistor
10
-10^-1
-1
-10
-10²
I_C (mA)
Fig. 15. PNP transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
0.35 0.35
0.15
0.23
1
2
3
0.95
0.22
1.05
0.30
0.125
0.205
0.04
max
0.34
0.40
Dimensions in mm
Fig. 16. Package outline DFN1010B-6 (SOT1216)
6
5
4
0.275 0.275
1.05
1.15
0.32
0.40
13-03-05
PQMD12
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2013
© NXP N.V. 2013. All rights reserved
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