PQMD12 Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

PQMD12
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
24 July 2013
Product data sheet
1. General description
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• 100 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Low package height of 0.37 mm
• Reduces component count
• Reduces pick and place costs
• AEC-Q101 qualified
3. Applications
• Low current peripheral driver
• Control of IC inputs
• Replaces general-purpose transistors in digital applications
• Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
V_CEO
collector-emitter
voltage
open base
I_O
output current
Per transistor; for the PNP transistor with negative polarity
R1
resistance 1
T_amb = 25 °C
R2/R1
resistance ratio
Min Typ Max Unit
-
-
50
V
-
-
100 mA
33
47
0.8 1
61
kΩ
1.2
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