PQMD12 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

NXP Semiconductors
PQMD12
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
R_th(j-a)
thermal resistance
from junction to
ambient
Per device
R_th(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
in free air
Min Typ Max Unit
[1]
-
-
543 K/W
[1]
-
-
357 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10³
Z_th(j-a)
(K/W)
10²
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
aaa-007378
1
10^-5
10^-4
10^-3
10^-2
10^-1
1
FR4 PCB, standard footprint
10
10²
10³
t_p (s)
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A; T_amb = 25 °C
current
I_CEO
collector-emitter cut-off V_CE = 30 V; I_B = 0 A; T_amb = 25 °C
current
V_CE = 30 V; I_B = 0 A; T_amb = 150 °C
I_EBO
emitter-base cut-off
V_EB = 5 V; I_C = 0 A; T_amb = 25 °C
current
PQMD12
All information provided in this document is subject to legal disclaimers.
Product data sheet
24 July 2013
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
5
µA
-
-
90
µA
© NXP N.V. 2013. All rights reserved
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