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| PQMD12 Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k | |||
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NXP Semiconductors
PQMD12
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
Symbol
hFE
VCEsat
VI(off)
VI(on)
R1
R2/R1
Cc
fT
103
hFE
102
10
Parameter
Conditions
DC current gain
VCE = 5 V; IC = 5 mA; Tamb = 25 °C
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C
on-state input voltage VCE = 0.3 V; IC = 2 mA; Tamb = 25 °C
resistance 1
Tamb = 25 °C
resistance ratio
collector capacitance
VCB = 10 V; IE = 0 A; f = 1 MHz;
Tamb = 25 °C; TR1 (NPN)
VCB = -10 V; IE = 0 A; f = 1 MHz;
Tamb = 25 °C; TR2 (PNP)
transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; [1]
Tamb = 25 °C; TR1 (NPN)
VCE = -5 V; IC = -10 mA; f = 100 MHz; [1]
Tamb = 25 °C; TR2 (PNP)
[1] Characteristics of built-in transistor
006aac752
1
Min Typ Max Unit
80
-
-
-
-
150 mV
-
1.2 0.8 V
3
1.6 -
V
33
47
61
kΩ
0.8 1
1.2
-
-
2.5 pF
-
-
3
pF
-
230 -
MHz
-
180 -
MHz
006aac753
(1)
(2)
VCEsat
(3)
(V)
(1)
(2)
10-1
(3)
1
10-1
1
10
102
IC (mA)
10-2
10-1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Fig. 4.
NPN transistor: DC current gain as a function of Fig. 5.
collector current; typical values
NPN transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
PQMD12
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2013
© NXP N.V. 2013. All rights reserved
5 / 13
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