PQMD12 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

NXP Semiconductors
10³
h_FE
10²
10
PQMD12
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
006aac758
(1)
(2)
(3)
-1
V_CEsat
(V)
-10^-1
006aac759
(1)
(2)
(3)
1
-10^-1
-1
V_CE = -5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = -40 °C
-10
-10²
I_C (mA)
-10^-2
-10^-1
-1
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = -40 °C
-10
-10²
I_C (mA)
Fig. 10. PNP transistor: DC current gain as a function of Fig. 11. PNP transistor: Collector-emitter saturation
collector current; typical values
voltage as a function of collector current;
typical values
-10
006aac760
-10
006aac761
V_I(on)
(1)
(V)
(2)
(3)
-1
V_I(off)
(V)
(1)
(2)
-1
(3)
-10^-1
-10^-1
-1
V_CE = -0.3 V
(1) T_amb = -40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
-10
-10²
I_C (mA)
Fig. 12. PNP transistor: On-state input voltage as a
function of collector current; typical values
-10^-1
-10^-1
-1
-10
I_C (mA)
V_CE = -5 V
(1) T_amb = -40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 13. PNP transistor: Off-state input voltage as a
function of collector current; typical values
PQMD12
Product data sheet
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24 July 2013
© NXP N.V. 2013. All rights reserved
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