PMPB33XP Datasheet, PDF (8/14 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
-1.2
V_GS(th)
(V)
-0.8
-0.4
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max
typ
min
10⁴
C
(pF)
10³
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C_iss
C_oss
0
-60
0
60
I_D = -0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
-4.5
V_GS
(V)
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10²
-10^-1
C_rss
-1
f = 1 MHz; V_GS = 0 V
-10
-10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V_DS
I_D
-3.0
V_GS(pl)
-1.5
0
0
4
8
12
16
20
Q_G (nC)
I_D = -5 A; V_DS = -10 V; T_amb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
PMPB33XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
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