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PMPB33XP Datasheet, PDF (6/14 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET
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NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
Symbol
RDSon
Parameter
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -5.5 A; Tj = 25 °C
VGS = -4.5 V; ID = -5.5 A; Tj = 150 °C
VGS = -2.5 V; ID = -5 A; Tj = 25 °C
VGS = -1.8 V; ID = -2.1 A; Tj = 25 °C
VDS = -10 V; ID = -5.5 A; Tj = 25 °C
f = 1 MHz
VDS = -10 V; ID = -5.5 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; ID = -5.5 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-
-
100 nA
-
30
37
mΩ
-
45
56
mΩ
-
35
46
mΩ
-
45
65
mΩ
-
28
-
S
-
4.5 -
Ω
-
15
23
nC
-
2
-
nC
-
4
-
nC
-
1575 -
pF
-
145 -
pF
-
125 -
pF
-
12
-
ns
-
42
-
ns
-
62
-
ns
-
23
-
ns
-
-0.6 -1.2 V
-20
ID
(A)
-16
-4.5 V
-2.5 V
-2.2 V
017aaa784
-2 V
VGS = -1.8 V
-10-2
ID
(A)
-10-3
017aaa785
-12
-1.6 V
min
typ
max
-10-4
-8
-1.4 V
-10-5
-4
-1.2 V
0
0
-1
-2
-3
-4
VDS (V)
Tj = 25 °C
-10-6
0
-0.4
Tj = 25 °C; VDS = -5 V
-0.8
-1.2
VGS (V)
Fig. 6.
PMPB33XP
Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
5 September 2012
6 / 14
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