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PMPB33XP Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET
PMPB33XP
20 V, single P-channel Trench MOSFET
5 September 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj = 25 °C
-
-
-20 V
VGS
gate-source voltage
-12 -
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
-
-7.9 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -5.5 A; Tj = 25 °C
resistance
-
30
37
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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