PMPB33XP Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
0.10
R_DSon
(Ω)
0.08
0.06
0.04
0.02
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-1.5 V -1.6 V -1.7 V -1.8 V
-2 V
-2.2 V
-2.5 V
-3.2 V
V_GS = -4.5 V
0.10
R_DSon
(Ω)
0.08
0.06
0.04
0.02
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T_j = 150 °C
T_j = 25 °C
0
0
-5
T_j = 25 °C
-10
-15
-20
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
-20
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I_D
(A)
-15
0
0
-1
-2
-3
-4
-5
V_GS (V)
I_D = -5.5 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.6
a
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1.4
1.2
-10
1.0
-5
0.8
T_j = 150 °C
T_j = 25 °C
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
V_GS (V)
V_DS > I_D × R_DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB33XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 September 2012
© NXP B.V. 2012. All rights reserved
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