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| PMPB33XP Datasheet, PDF (5/14 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET | |||
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NXP Semiconductors
PMPB33XP
20 V, single P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
017aaa542
1
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
017aaa543
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
0
0.01
1
10-3
10-2
10-1
1
FR4 PCB, mounting pad for drain 6 cm2
10
102
103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C
PMPB33XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
5 September 2012
Min Typ Max Unit
-20 -
-
V
-0.47 -0.68 -0.9 V
-
-
-1
µA
-
-
-100 nA
© NXP B.V. 2012. All rights reserved
5 / 14
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