PHPT61010PY Datasheet, PDF (8/16 Pages) NXP Semiconductors – 100 V, 10 A PNP high power bipolar transistor

NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
-1.2
V_BE
(V)
-1.0
aaa-014834
-1.2
V_BEsat
(V)
-1.0
aaa-014835
-0.8
(1)
-0.6
(2)
-0.4
(3)
-0.8
(1)
-0.6
(2)
-0.4
(3)
-0.2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
-1
aaa-015936
-0.2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
-1
aaa-015937
V_CEsat
(V)
-10^-1
(1)
(2)
(3)
-10^-2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
V_CEsat
(V)
(1)
-10^-1
(2)
(3)
(4)
-10^-2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 20
(4) I_C/I_B = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT61010PY
Product data sheet
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20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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