|
PHPT61010PY Datasheet, PDF (1/16 Pages) NXP Semiconductors – 100 V, 10 A PNP high power bipolar transistor | |||
|
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
20 March 2015
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61010NY.
2. Features and benefits
⢠High thermal power dissipation capability
⢠Suitable for high temperature applications up to 175 °C
⢠Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
⢠High energy efficiency due to less heat generation
⢠AEC-Q101 qualified
3. Applications
⢠Power management
⢠Load switch
⢠Linear mode voltage regulator
⢠Backlighting applications
⢠Motor drive
⢠Relay replacement
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
tp ⤠1 ms; single pulse
IC = -10 A; IB = -1 A; tp ⤠300 µs;
δ ⤠0.02; Tamb = 25 °C; pulsed
Min Typ Max Unit
-
-
-100 V
-
-
-10 A
-
-
-20 A
-
53
80
mΩ
Scan or click this QR code to view the latest information for this product
|
▷ |