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PHPT61010PY Datasheet, PDF (6/16 Pages) NXP Semiconductors – 100 V, 10 A PNP high power bipolar transistor
NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -80 V; IE = 0 A; Tamb = 25 °C
VCB = -80 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = -8 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -2 V; IC = -0.5 A; Tamb = 25 °C
VCE = -2 V; IC = -1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
collector-emitter
saturation voltage
VCE = -2 V; IC = -5 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
VCE = -2 V; IC = -10 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -1 A; IB = -50 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -5 A; IB = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -10 A; IB = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -10 A; IB = -1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -5 A; IB = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -10 A; IB = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = -2 V; IC = -0.5 A; Tamb = 25 °C
delay time
rise time
turn-on time
VCC = -12.5 V; IC = -5 A;
IBon = -250 mA; IBoff = 250 mA;
Tamb = 25 °C
storage time
fall time
turn-off time
PHPT61010PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
Min Typ Max Unit
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
180 330 -
170 265 -
60
75
-
10
15
-
-
-55 -90 mV
-
-160 -250 mV
-
-530 -800 mV
-
53
80
mΩ
-
-
-0.9 V
-
-
-1.1 V
-
-
-1.3 V
-
-
-0.8 V
-
20
-
ns
-
145 -
ns
-
165 -
ns
-
155 -
ns
-
80
-
ns
-
235 -
ns
© NXP Semiconductors N.V. 2015. All rights reserved
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