PHPT61010PY Datasheet, PDF (3/16 Pages) NXP Semiconductors – 100 V, 10 A PNP high power bipolar transistor

NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current
I_CM
peak collector current
t_p ≤ 1 ms; single pulse
I_B
base current
I_BM
peak base current
t_p ≤ 1 ms; pulsed
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
-100 V
-
-100 V
-
-8
V
-
-10 A
-
-20 A
-
-1
A
-
-2
A
[1]
-
[2]
-
1.5 W
3.7 W
[3]
-
5
W
[4]
-
25
W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 Printed-Circuit Board ( PCB), single-sided copper, tin-plated mounting pad for
collector 6 cm².
[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[4] Power dissipation from junction to mounting base.
PHPT61010PY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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