PHPT61010PY Datasheet, PDF (7/16 Pages) NXP Semiconductors – 100 V, 10 A PNP high power bipolar transistor

NXP Semiconductors
PHPT61010PY
100 V, 10 A PNP high power bipolar transistor
Symbol
f_T
C_c
Parameter
transition frequency
collector capacitance
Conditions
V_CE = -10 V; I_C = -500 mA;
f = 100 MHz; T_amb = 25 °C
V_CB = -10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
Min Typ Max Unit
-
90
-
MHz
-
101 -
pF
500
h_FE
400
(1)
300
(2)
200
(3)
100
aaa-015932
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
-10
I_C
(A)
-8
I_B = -240 mA
-160
-100
aaa-015933
-70
-6
-50
-30
-4
-20
-15
-2
-10
-5
0
0
-1
-2
-3
-4
-5
V_CE (V)
T_amb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT61010PY
Product data sheet
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20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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