PHP143NQ04T Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
10
R_DSon
(mΩ)
8
T_j = 25 °C
6
4
2
0
0
80
03aq55
V_GS = 7 V ^{7.5 V}
8V
8.5 V
10 V
160
240
I_D (A)
PHP143NQ04T
N-channel TrenchMOS standard level FET
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 25 A
T_j = 25 °C
6
14 V
4
03aq59
V_DD = 32 V
10⁴
C
(pF)
10³
03aq58
C_iss
C_oss
2
C_rss
0
0
20
40
60
Q_G (nC)
10²_10−1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP143NQ04T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 April 2010
© NXP B.V. 2010. All rights reserved.
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