PHP143NQ04T Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
240
T_j = 25 °C
I_D
(A)
160
80
0
0
0.5
03aq54
10 V 8.5 V 8 V
7.5 V
7V
6.5 V
6V
5.5 V
5V
V_GS = 4.5 V
1
1.5
2
V_DS (V)
80
I_D
(A)
60
V_DS > I_D × R_DSon
03aq56
40
20
0
0
T_j = 175 °C
25 °C
2
4
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
5
V_GS(th)
(V)
4
max
03aa32
10^−1
I_D
(A)
10^−2
03aa35
min typ max
3
typ
2
min
10^−3
10^−4
1
10^−5
0
−60
0
60
120
180
T_j (°C)
10^−6
0
2
4
6
V_GS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHP143NQ04T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 April 2010
© NXP B.V. 2010. All rights reserved.
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