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PHP143NQ04T Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Static characteristics
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
-
voltage
see Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
see Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
see Figure 7; see Figure 8
IDSS
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
resistance
see Figure 9; see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
see Figure 9; see Figure 10
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; -
see Figure 11
-
-
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; -
see Figure 12
-
-
td(on)
turn-on delay time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
-
tr
rise time
RG(ext) = 10 Ω; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
-
Typ Max Unit
-
-
V
-
-
V
-
4.4 V
-
-
V
3
4
V
-
1
µA
-
500 µA
2
100 nA
2
100 nA
-
9.9 mΩ
4.4 5.2 mΩ
52
-
nC
12
-
nC
16 -
nC
2840 -
pF
710 -
pF
295 -
pF
15
-
ns
51 -
ns
81
-
ns
56
-
ns
0.85 1.2 V
85
-
ns
38
-
C
PHP143NQ04T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 April 2010
© NXP B.V. 2010. All rights reserved.
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