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| PHP143NQ04T Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
PHP143NQ04T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C;
RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C;
see Figure 1
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
IDM
peak drain current
tp ⤠10 µs; pulsed; Tmb = 25 °C;
see Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 69 A; Vsup ⤠40 V; unclamped;
tp = 0.27 ms; RGS = 50 â¦
Min Typ Max Unit
-
-
40 V
-
-
40 V
-20 -
-
-
20 V
75 A
-
-
75 A
-
-
240 A
-
-
-55 -
-55 -
200 W
175 °C
175 °C
-
-
75 A
-
-
240 A
-
-
475 mJ
120
Ider
(%)
80
03aq60
120
Pder
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PHP143NQ04T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 26 April 2010
© NXP B.V. 2010. All rights reserved.
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