PHP143NQ04T Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PHP143NQ04T
N-channel TrenchMOS standard level FET
Rev. 03 — 26 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ General industrial applications
„ Motors, lamps and solenoids
„ Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 9; see Figure 10
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A; V_DS = 32 V;
T_j = 25 °C; see Figure 11
Min Typ Max Unit
-
-
40 V
-
-
75 A
-
-
200 W
-
4.4 5.2 mΩ
-
16 -
nC