BUK7C06-40AITE Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
12
R_DSon
(mΩ)
10
Label is V_GS (V)
8
6
4
2
0
40
03ni23
5.5
6.0
7.0
8.0
9.0
10.0
80
120
I_D (A)
2.0
a
1.6
1.2
0.8
0.4
0
−60
0
03ni30
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
5
V_GS(th)
(V)
4
max
03aa32
10^−1
I_D
(A)
10^−2
03aa35
min typ max
3
typ
10^−3
2
min
10^−4
1
10^−5
0
−60
0
60
120
180
T_j (°C)
10^−6
0
2
4
6
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
BUK7C06-40AITE_5
Product data sheet
Rev. 05 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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