BUK7C06-40AITE Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
120
P_der
(%)
80
40
03na19
160
I_D
(A)
120
80
capped at 75A
due to package
40
03ng16
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
Limit R_DSon = V_DS/I_D
(A)
10²
capped at 75 A due to package
10
Fig 2. Continuous drain current as a function of
mounting base temperature
03ni28
t_p = 10 µs
100 µs
1 ms
DC
10 ms
100 ms
1
1
10
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C06-40AITE_5
Product data sheet
Rev. 05 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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