BUK7C06-40AITE Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
t_d(on)
t_r
t_d(off)
t_f
L_D
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
L_S
internal source
inductance
Source-drain diode
V_DS = 30 V; R_L = 1.2 Ω; V_GS = 10 V;
R_G(ext) = 10 Ω; T_j = 25 °C
measured from upper edge of drain
mounting base to centre of die; T_j = 25 °C
measured from source lead to source
bond pad; T_j = 25 °C
V_SD
source-drain voltage I_S = 40 A; V_GS = 0 V; T_j = 25 °C;
see Figure 18
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
35
-
ns
-
115 -
ns
-
155 -
ns
-
110 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
96
-
ns
-
224 -
nC
300
8.0
7.5
I_D ^10.0
7.0
(A) ^20.0
6.5
200
6.0
100
0
0
5.5
5.0
4.5
4.0
2
4
03ni21
Label is V_GS (V)
6
8
10
V_DS (V)
18
R_DSon
(mΩ)
12
03ni22
6
0
4
8
12
16
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
BUK7C06-40AITE_5
Product data sheet
Rev. 05 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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