BUK7C06-40AITE Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
Rev. 05 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Reduced component count due to
integrated current sensor
1.3 Applications
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Fan control
„ Variable valve timing for engines
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference
Parameter
drain-source voltage
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
I_D/I_sense
ratio of drain current to
sense current
S_F(TSD)
temperature sense diode
temperature coefficient
V_F(TSD)
temperature sense diode
forward voltage
Conditions
Min
T_j ≥ 25 °C; T_j ≤ 175 °C
-
V_GS = 10 V; T_mb = 25 °C; see Figure 2; [1] -
see Figure 3
V_GS = 10 V; I_D = 50 A; T_j = 25 °C; see
-
Figure 7; see Figure 8
T_j > -55 °C; T_j < 175 °C; V_GS = 10 V
585
I_F = 250 µA; T_j > -55 °C; T_j < 175 °C
-1.4
I_F = 250 µA; T_j = 25 °C
648
[1] Current is limited by power dissipation chip rating.
Typ Max Unit
-
40
V
-
155 A
4.7
6
mΩ
615 645
-1.54 -1.68 mV/K
658 668 mV