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| BUK7C06-40AITE Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠175 °C
RGS = 20 kâ¦
Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 [1]
[2]
Tmb = 100 °C; VGS = 10 V; see Figure 2
[2]
IDM
peak drain current
Tmb = 25 °C; tp ⤠10 µs; pulsed; see Figure 3
Ptot
total power dissipation Tmb = 25 °C; see Figure 1
IGS(CL)
gate-source clamping continuous
current
pulsed; tp = 5 ms; δ = 0.01
Visol(FET-TS FET to temperature
D)
sense diode isolation
voltage
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
[2]
ISM
peak source current
Avalanche ruggedness
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ⤠40 V; RGS = 50 â¦; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
Electrostatic discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kâ¦
voltage
Min
-
-
-20
-
-
-
-
-
-
-
-100
-55
-55
-
-
-
-
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max
40
40
20
155
75
75
620
272
10
50
100
175
175
155
75
620
1.46
6
Unit
V
V
V
A
A
A
A
W
mA
mA
V
°C
°C
A
A
A
J
kV
BUK7C06-40AITE_5
Product data sheet
Rev. 05 â 16 February 2009
© NXP B.V. 2009. All rights reserved.
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