BUK7880-55A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
15
I_D
(A)
12
9
003aab526
10
V_GS
(V)
8
6
V_DS (V) = 14
003aab522
V_DS (V) = 44
6
4
3
T_j = 150 °C
T_j = 25 °C
0
0
2
4
6
8
V_GS (V)
V_DS = 15 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2
0
0
5
10 _{QG (nC)} 15
T_j = 25 °C; I_D = 10 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
25
I_S
(A)
20
15
003aab521
10
I_AL
(A)
1
003aab528
(1)
(2)
10
5
T_j = 150 °C
T_j = 25 °C
0
0.0
0.4
0.8
1.2 _{VSD (V)} 1.6
V_GS = 0 V
Fig 15. Source current as a function of source-drain
voltage; typical values
(3)
10^-1
10^-2
10^-3
10^-2
10^-1
1 _{tAL (ms)} 10
See Table note 1 of Table 3 Limiting values.
(1) Single-pulse; T_j = 25 °C.
(2) Single-pulse; T_j = 150 °C.
(3) Repetitive.
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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