BUK7880-55A Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
40
03aa17
8
I_D
(A)
6
4
2
003aab532
0
0
50
100
150
200
T_sp (°C)
P_der = _P----_t--_o--^P-_t-₍--^t2-^o--₅-^t-_°---_C---₎ × 100 %
Fig 1. Normalized total power dissipation as a
function of solder point temperature
10²
I_D
(A)
10
Limit R_DSon = V_DS / I_D
0
0
50
V_GS ≥ 10 V
100 _{Tsp (°C)} 150
Fig 2. Continuous drain current as a function of
solder point temperature
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t_p = 10 µ s
100 µs
1 ms
1
DC
10 ms
100 ms
10^-1
10^-1
1
10
10²
V_DS (V)
T_sp = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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