|
BUK7880-55A Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET | |||
|
BUK7880-55A
N-channel TrenchMOS standard level FET
Rev. 01 â 1 November 2007
Product data sheet
1. Product proï¬le
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 150 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ⤠53 mJ
I ID ⤠7 A
I RDSon = 68 m⦠(typ)
I Ptot ⤠8 W
2. Pinning information
Table 1. Pinning
Pin Description
1
gate (G)
2
drain (D)
3
source (S)
4
solder point; connected to drain (D)
Simpliï¬ed outline
4
1
2
3
sot223_so
SOT223 (SC-73)
Symbol
D
G
mbb076 S
|
▷ |