BUK7880-55A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown voltage I_D = 250 µA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
V_GS(th) gate-source threshold voltage I_D = 1 mA; V_DS = V_GS; see Figure 9
T_j = 25 °C
T_j = 150 °C
T_j = −55 °C
I_DSS
drain leakage current
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 150 °C
I_GSS
gate leakage current
V_GS = ±20 V; V_DS = 0 V
R_DSon drain-source on-state resistance V_GS = 10 V; I_D = 10 A; see Figure 6 and 8
T_j = 25 °C
T_j = 150 °C
Dynamic characteristics
Q_G(tot) total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
t_d(on)
turn-on delay time
t_r
rise time
t_d(off)
turn-off delay time
t_f
fall time
Source-drain diode
I_D = 10 A; V_DD = 44 V; V_GS = 10 V;
see Figure 14
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
see Figure 12
V_DS = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
I_S = 15 A; V_GS = 0 V; see Figure 15
I_S = 20 A; dI_S/dt = −100 A/µs;
V_GS = −10 V; V_R = 30 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
2
3
1.2 -
-
-
4
V
-
V
4.4 V
-
0.05 10 µA
-
-
500 µA
-
2
100 nA
-
68 80 mΩ
-
-
148 mΩ
-
12 -
nC
-
2.5 -
nC
-
5
-
nC
-
374 500 pF
-
92 110 pF
-
62 85 pF
-
8
-
ns
-
52 -
ns
-
17 -
ns
-
9
-
ns
-
0.85 1.2 V
-
33 -
ns
-
31 -
nC
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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