BUK7880-55A Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
03aa35
min typ max
0
−60
0
60
120
180
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
2
4
6
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
9
003aab527
10³
g_fs
(S)
C
(pF)
8
003aab520
C_iss
C_oss
7
10²
C_rss
6
5
5
10
15
I_D (A) ²⁰
T_j = 25 °C; V_DS = 15 V
Fig 11. Forward transconductance as a function of
drain current; typical values
10
10^-1
1
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
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