BUK754R0-55B Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-55B; BUK764R0-55B
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
03nh20
10
V_GS
(V)
8
03nh18
60
6
V_DS (V) = 14
V_DS (V) = 44
40
4
T_j = 175 °C
20
T_j = 25 °C
0
0
2
4
V_GS (V) ⁶
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
2
0
0
20
40
60
80
100
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
100
I_D
(A)
80
60
03nh17
10²
I_AL
(A)
10
003aab677
(1)
(2)
40
T_j = 175 °C
20
T_j = 25 °C
0
0.0
0.2
0.4
0.6
0.8
1.0
V_SD (V)
(3)
1
10^-1
10^-3
10^-2
10^-1
1 _{tAL (ms)} 10
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
See Table note 4 of Table 3 Limiting values.
(1) Single-pulse; T_j = 25 °C.
(2) Single-pulse; T_j = 150 °C.
(3) Repetitive.
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK75_764R0-55B_4
Product data sheet
Rev. 04 — 4 October 2007
© NXP B.V. 2007. All rights reserved.
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