BUK754R0-55B Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-55B; BUK764R0-55B
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
max
typ
min
03aa32
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
03aa35
min typ max
0
−60
0
60
120
180
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
2
4
6
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
120
g_fs
(S)
100
03nh19
80
60
40
20
0
0
20
40
I_D (A) ⁶⁰
T_j = 25 °C; V_DS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values
7000
C
(pF)
6000
5000
03nh24
C_iss
4000
3000
2000
C_oss
1000
C_rss
0
10^-1
1
10 _{VDS (V)} 10²
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK75_764R0-55B_4
Product data sheet
Rev. 04 — 4 October 2007
© NXP B.V. 2007. All rights reserved.
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