BUK754R0-55B Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-55B; BUK764R0-55B
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
P_der = _P----_t--_o--^P-_t-₍--^t2-^o--₅-^t-_°---_C---₎ × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
(1)
10
200
I_D
(A)
150
001aaf871
100
(1)
50
0
25
75
125
175
T_mb (°C)
V_GS ≥ 10 V
(1) Capped at 75 A due to package.
Fig 2. Continuous drain current as a function of
mounting base temperature
03ng55
t_p = 10 µ s
100 µs
1 ms
DC
10 ms
100 ms
1
10^-1
1
10
10²
V_DS (V)
T_mb = 25 °C; I_DM is single pulse
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_764R0-55B_4
Product data sheet
Rev. 04 — 4 October 2007
© NXP B.V. 2007. All rights reserved.
3 of 14