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BUK754R0-55B Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
BUK754R0-55B; BUK764R0-55B
N-channel TrenchMOS standard level FET
Rev. 04 — 4 October 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 175 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 1.2 J
I ID ≤ 75 A
I RDSon = 3.4 mΩ (typ)
I Ptot ≤ 300 W
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to
drain (D)
Simplified outline
mb
Symbol
mb
D
123
03ab54
SOT78A (TO-220AB)
2
13
SOT404 (D2PAK)
G
mbb076 S