BUK754R0-55B Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK754R0-55B; BUK764R0-55B
N-channel TrenchMOS standard level FET
300
I_D
20
7 _6.5
(A) ₁₀
6
250
200
03nh22
5.5
7
R_DSon
(m Ω)
6
03nh21
150
5
5
100
4.5
50
V_GS (V) = 4
0
0
2
4
6
8
10
V_DS (V)
4
3
5
10
15
20
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
7
R_DSon
(m Ω)
6
03nh23
2
a
V_GS (V) = 6
6.5
1.5
03ne89
7
5
1
8
10
4
0.5
3
0
50
T_j = 25 °C
100 150 200 250 300
I_D (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
Tj (°C)
a = -_R---_D----^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK75_764R0-55B_4
Product data sheet
Rev. 04 — 4 October 2007
© NXP B.V. 2007. All rights reserved.
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