BUK7230-55A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
100
I_S
(A)
80
60
40
20
0
0
03na42
T_j = 175 °C
T_j = 25 °C
0.4
0.8
1.2
1.4
V_SD (V)
10
V_GS
(V)
8
6
4
2
0
0
03na43
V_DD = 14 V
V_DD = 44 V
10
20
30
Q_G (nC)
Fig 13. Reverse diode current; typical values
1600
C
(pF)
1200
800
400
0
10^−2
10^−1
Fig 14. Turn-on gate charge characteristics; typical
values
03na48
C_iss
C_oss
C_rss
1
10
10²
V_DS (V)
Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
BUK7230-55A_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 March 2010
© NXP B.V. 2010. All rights reserved.
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