BUK7230-55A Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

BUK7230-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_mb = 25 °C;
see Figure 1 and 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Avalanche ruggedness
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 34 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge
Static characteristics
V_GS = 10 V; I_D = 25 A;
V_DS = 44 V; see Figure 14
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11
and 12
Min Typ Max Unit
-
-
55 V
-
-
38 A
-
-
88 W
-
-
58 mJ
-
9
-
nC
-
26 30 mΩ