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BUK7230-55A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS standard level FET
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NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
Min
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
55
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
50
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 2
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 -
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
VDS = 0 V; VGS = 10 V; Tj = 25 °C
-
VDS = 0 V; VGS = -10 V; Tj = 25 °C
-
VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11 -
and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11 -
and 12
ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 14 -
-
-
VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C;
-
see Figure 15
-
-
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
-
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
measured from drain lead from package to
-
centre of die; Tj = 25 °C
measured from drain lead from package to
-
source bond pad
IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
IS = 25 A; dIS/dt = -100 A/µs; VGS = -10 V;
-
VDS = 30 V; Tj = 25 °C
-
Typ Max Unit
-
-
V
-
-
V
3
4
V
-
4.4 V
-
-
V
-
500 µA
0.05 10
µA
2
100 nA
2
100 nA
-
60
mΩ
26
30
mΩ
24
-
nC
5
-
nC
9
-
nC
864 1152 pF
218 262 pF
139 191 pF
14
-
ns
68
-
ns
83
-
ns
43
-
ns
2.5 -
nH
7.5 -
nH
0.85 1.2 V
40
-
ns
100 -
nC
BUK7230-55A_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 March 2010
© NXP B.V. 2010. All rights reserved.
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