BUK7230-55A Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

NXP Semiconductors
BUK7230-55A
N-channel TrenchMOS standard level FET
80
I_D
(A)
60
40
20
0
0
03na41
T_j = 25 °C
T_j = 175 °C
4
8
12
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
70
R_DSon
(mΩ)
60
50
V_GS (V) = 6
6.5
7
40
30
03na47
8
9
10
2.4
a
1.8
1.2
0.6
03aa28
20
0
20
40
60
80
100
I_D (A)
0
−60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7230-55A_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 March 2010
© NXP B.V. 2010. All rights reserved.
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