PSMN1R5-25YL Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN1R5-25YL
N-channel TrenchMOS logic level FET
12
R_DSon
(mΩ)
10
003aac908
8
6
4
2
0
2
4
6
8 _{VGS (V)} 10
8000
C
C_iss
(pF)
6000
C_rss
4000
003aac907
2000
0
2
4
6
8
10
V_GS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Input and reverse transfer capacitances as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
10^−3
I_D
(A)
10^−4
10^−5
003aab271
min typ
max
3
VGS (th)
(V)
2
1
max
typ
min
003aac337
10^−6
0
0.5
1
1.5
2
2.5
V_GS (V)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PSMN1R5-25YL_1
Product data sheet
Rev. 01 — 16 June 2009
© NXP B.V. 2009. All rights reserved.
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