PSMN1R5-25YL Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN1R5-25YL
N-channel TrenchMOS logic level FET
250
I_D
(A)
200
150
100
(1)
50
0
0
50
003aac900
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10⁴
I_D
(A)
10³
Limit R_DSon = V_DS / I_D
10²
(1)
10
1
10^-1
1
120
P_der
(%)
80
03aa15
40
0
0
50
100
150
200
T_mb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac901
10 μs
DC
10
100 μs
1 ms
10 ms
100 ms
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R5-25YL_1
Product data sheet
Rev. 01 — 16 June 2009
© NXP B.V. 2009. All rights reserved.
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