PSMN1R5-25YL Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN1R5-25YL
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
3. Ordering information
Simplified outline
mb
1234
SOT669
(LFPAK)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
PSMN1R5-25YL LFPAK
plastic single-ended surface-mounted package (LFPAK); 4 leads
4. Limiting values
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 150 °C
T_j ≥ 25 °C; T_j ≤ 150 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1
t_p ≤ 10 µs; pulsed; T_mb = 25 °C; see Figure 3
T_mb = 25 °C; see Figure 2
-
25
V
-
25
V
-20 20
V
[1] -
100 A
[1] -
100 A
-
815 A
-
109 W
-55 150 °C
-55 150 °C
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C;
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[1] -
-
100 A
815 A
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A; V_sup ≤ 25 V;
drain-source avalanche R_GS = 50 Ω; unclamped
energy
-
290 mJ
[1] Continuous current is limited by package.
PSMN1R5-25YL_1
Product data sheet
Rev. 01 — 16 June 2009
© NXP B.V. 2009. All rights reserved.
2 of 13