PSMN1R2-25YL Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN1R2-25YL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
120
I_D
(A)
90
10
3.5
V_GS (V) = 3
60
30
0
0
1
2
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2.8
2.6
2.4
2.2
3
4
V_DS (V)
10^-1
I_D
(A)
10^-2
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min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 7. Output characteristics: drain current as a
Fig 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
3
VGS (th)
(V)
2
1
max
typ
min
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0
-6 0
0
60
120
180
Tj (°C)
10
R_DS(on)
2.6
(mΩ)
8
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2.8
6
4
3
3.5
2
V_GS (V) = 10
0
0
20
40
60
80
100
I_D (A)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
PSMN1R2-25YL_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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