PSMN1R2-25YL Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK

PSMN1R2-25YL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
-
-
25 V
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; [1] -
-
100 A
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
121 W
T_j
junction temperature
Avalanche ruggedness
-55 -
150 °C
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 100 A; V_sup ≤ 25 V;
R_GS = 50 Ω; unclamped
-
-
677 mJ
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 4.5 V; I_D = 25 A;
V_DS = 12 V; see Figure 12;
see Figure 13
-
11.9 -
nC
-
50.6 -
nC