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PSMN1R2-25YL Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
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NXP Semiconductors
PSMN1R2-25YL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Table 6. Characteristics …continued
Symbol Parameter
Conditions
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 5.6 Ω
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 20 V
[1] Tested to JEDEC standards where applicable.
Min Typ Max Unit
-
69
-
ns
-
125 -
ns
-
94
-
ns
-
56
-
ns
-
0.78 1.2 V
-
52
-
ns
-
66
-
nC
100
ID
(A)
80
60
40
20
0
0
003aad128
Tj = 150 °C
25 °C
1
2
3
4
VGS (V)
12
RDS(on)
(mΩ) 10
8
6
4
2
0
0
003aad140
5
10
15
20
VGS (V)
Fig 5. Transfer characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN1R2-25YL_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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